Infineon IPP65R041CFD7XKSA1: A 650V CoolMOS™ CFD7 Power Transistor for High-Efficiency Applications

In the rapidly evolving world of power electronics, achieving higher efficiency and power density is paramount. The Infineon IPP65R041CFD7XKSA1 stands out as a premier solution, engineered to meet these demanding requirements. As a member of Infineon's groundbreaking CoolMOS™ CFD7 family, this 650V superjunction MOSFET is specifically designed for high-performance switched-mode power supplies (SMPS), server and telecom systems, industrial drives, and renewable energy applications.

A key innovation of the CFD7 series is the integration of a fast body diode, which significantly enhances its hard-switching performance. This feature is critical for applications like power factor correction (PFC) stages, where the diode's reverse recovery behavior directly impacts switching losses and electromagnetic interference (EMI). The incorporated diode offers superior robustness and excellent reverse recovery characteristics, enabling designers to push for higher switching frequencies without sacrificing efficiency.

The IPP65R041CFD7XKSA1 boasts an ultra-low on-state resistance (R DS(on)) of just 41 mΩ maximum. This exceptionally low resistance translates to minimal conduction losses, allowing for more power to be delivered to the load with less energy wasted as heat. Consequently, systems can operate cooler, which improves long-term reliability and can reduce the size and cost of associated cooling components.

Furthermore, this transistor exhibits outstanding switching performance. The combination of low gate charge (Q G) and low output capacitance (C OSS) ensures rapid turn-on and turn-off times. This not only reduces switching losses but also provides greater flexibility for designers to optimize their circuits for either maximum efficiency or higher frequency operation, leading to more compact power supply designs.

The device is also renowned for its high level of robustness and ease of use. It features a strong avalanche ruggedness and is designed to be resistant against gate-oxide damage, thanks to its higher gate-source voltage rating. Its PQFN 8x8 package offers a low package profile and excellent thermal performance, facilitating efficient heat dissipation from the PCB.

ICGOOODFIND: The Infineon IPP65R041CFD7XKSA1 is a state-of-the-art power MOSFET that sets a new benchmark for efficiency and power density. Its integrated fast body diode, ultra-low R DS(on), and superior switching characteristics make it an indispensable component for engineers designing next-generation high-efficiency power systems across a wide range of industries.

Keywords: CoolMOS™ CFD7, High-Efficiency, Integrated Fast Body Diode, Ultra-Low RDS(on), High Switching Frequency.