Infineon IPB123N10N3GATMA1 OptiMOS 3 Power MOSFET: Key Features and Applications

The Infineon IPB123N10N3GATMA1 is a member of the OptiMOS™ 3 family, representing a high-performance N-channel power MOSFET designed to meet the rigorous demands of modern power electronics. Engineered with advanced trench technology, this component excels in efficiency, thermal performance, and reliability, making it a preferred choice for a wide array of applications.

Key Features

One of the standout attributes of this MOSFET is its exceptionally low on-state resistance (RDS(on)), which is rated at just 3.3 mΩ at 10 V. This low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation. The device is rated for a drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 123 A, providing robust performance in high-power circuits.

Furthermore, it features low gate charge (QG) and fast switching capabilities, which are critical for reducing switching losses in high-frequency operations. This makes it ideal for switch-mode power supplies (SMPS) and motor control systems where efficiency at high frequencies is paramount. The component is also housed in a TO-263 (D2PAK) package, offering excellent thermal conductivity and mechanical durability, which simplifies mounting and heat dissipation in end applications.

Applications

The IPB123N10N3GATMA1 is versatile and finds use in numerous sectors. In industrial power systems, it is commonly deployed in motor drives, robotics, and automation equipment due to its high current handling and efficient switching. The automotive industry utilizes it in electric power steering (EPS), DC-DC converters, and battery management systems (BMS), where reliability and performance under harsh conditions are essential.

Additionally, it is highly effective in solar inverters and uninterruptible power supplies (UPS), where low losses contribute to higher overall system efficiency. Its fast switching speed also makes it suitable for synchronous rectification in advanced SMPS designs, helping to achieve higher power density and better thermal management.

ICGOOODFIND: The Infineon IPB123N10N3GATMA1 OptiMOS 3 Power MOSFET stands out for its superior efficiency, high current capability, and robust thermal performance, making it an excellent solution for demanding automotive, industrial, and renewable energy applications.

Keywords: Power MOSFET, Low RDS(on), High Efficiency, Fast Switching, Thermal Performance.