Infineon IPD95R2K0P7ATMA1: A High-Performance 950V CoolMOS™ P7 Power Transistor

The Infineon IPD95R2K0P7ATMA1 represents a significant advancement in high-voltage power transistor technology, engineered to meet the demanding requirements of modern power conversion systems. As part of the renowned CoolMOS™ P7 series, this 950V superjunction MOSFET is optimized for applications such as server and telecom SMPS (Switched-Mode Power Supplies), industrial motor drives, solar inverters, and EV charging infrastructure, where efficiency, power density, and reliability are paramount.

A standout feature of the IPD95R2K0P7ATMA1 is its exceptionally low specific on-resistance (RDS(on)), which minimizes conduction losses even at high switching frequencies. This allows designers to achieve higher efficiency levels while reducing the need for heat dissipation components. The device also boasts superior switching performance, thanks to reduced gate charge (Qg) and output capacitance (Coss), enabling faster switching speeds and lower switching losses. This is particularly beneficial in high-frequency designs aiming for compact form factors.

Moreover, the transistor incorporates advanced robustness and protection features. It offers enhanced avalanche ruggedness and a wide safe operating area (SOA), ensuring reliable operation under extreme conditions such as voltage spikes or overloads. The integrated body diode provides excellent reverse recovery characteristics, further improving system efficiency and reliability in hard-switching topologies.

Designed with sustainability in mind, the CoolMOS™ P7 technology significantly contributes to reducing energy losses in power systems, aligning with global energy efficiency standards and environmental goals. Its high voltage rating of 950V makes it suitable for both universal mains applications and high-voltage DC systems.

In summary, the Infineon IPD95R2K0P7ATMA1 sets a new benchmark for high-voltage power MOSFETs, delivering a perfect balance of efficiency, power density, and durability for next-generation power electronics.

ICGOODFIND: A top-tier component for high-efficiency, high-voltage power designs, combining ultra-low losses with robust performance.

Keywords:

CoolMOS™ P7

950V MOSFET

Low RDS(on)

High Switching Frequency

Power Efficiency