Infineon 20N60C3: A Comprehensive Technical Overview of its Features and Applications

The Infineon 20N60C3 stands as a prominent member of the CoolMOS™ C3 family, representing a significant advancement in high-voltage power MOSFET technology. Engineered for efficiency and robustness, this power semiconductor device is a preferred solution for a wide array of switching power supplies and industrial applications. Its design focuses on minimizing switching and conduction losses, which are critical parameters in modern high-efficiency systems.

At its core, the 20N60C3 is an N-channel MOSFET built on Infineon's proprietary superjunction (SJ) technology. This technology is the key to its exceptional performance, allowing it to achieve a very low specific on-state resistance (RDS(on)) for its voltage class. The "20" and "60" in its name denote a 20-ampere maximum continuous drain current (ID) and a 600-volt drain-source voltage (VDS) rating, respectively. This high voltage capability makes it suitable for operations directly from rectified mains voltages in regions up to 277VAC or even higher in three-phase systems.

One of the most critical features of the CoolMOS™ C3 series is its intrinsic fast body diode. This characteristic is paramount for hard-switching topologies like power factor correction (PFC) circuits. The diode exhibits excellent reverse recovery behavior, significantly reducing switching losses and electromagnetic interference (EMI) that typically occur during the diode's commutation. This leads to cooler operation, higher system reliability, and the potential for designing more compact systems with higher switching frequencies.

Furthermore, the device boasts a very low gate charge (QG) and a low effective output capacitance (COSS(er)). These parameters directly influence the switching speed and the energy required to turn the device on and off. The low gate charge simplifies drive circuit design, reduces stress on the gate driver IC, and minimizes driving losses. The low COSS(er) is particularly beneficial in resonant switching applications (e.g., LLC converters), as it reduces the circulating currents and improves overall efficiency.

Primary Applications of the Infineon 20N60C3 include:

Switched-Mode Power Supplies (SMPS): Particularly in server, telecom, and industrial power supplies where efficiency standards like 80 PLUS Titanium are mandatory.

Power Factor Correction (PFC) Stages: It is extensively used in both boost and totem-pole PFC circuits, which are essential for complying with harmonic current regulations (e.g., IEC 61000-3-2).

Industrial Motor Drives and Inverters: Its robustness and high voltage rating make it suitable for driving motors and in solar inverter applications.

High-Intensity Discharge (HID) Lighting: Used in the electronic ballasts that control the lamps.

Welding Equipment: Providing efficient and reliable power switching in demanding industrial environments.

ICGOODFIND: The Infineon 20N60C3 is a benchmark in the 600V power MOSFET category, masterfully balancing low conduction loss, superior switching performance, and diode ruggedness. Its adoption is a strategic choice for designers aiming to achieve peak efficiency, higher power density, and enhanced reliability in their AC-DC and DC-DC conversion systems.

Keywords: CoolMOS™ C3, Superjunction Technology, Power Factor Correction (PFC), Low Gate Charge, Fast Body Diode.