Infineon ISO1I813T Single-Channel Isolated Gate Driver: Datasheet, Application Circuit, and Key Features

In the realm of high-power electronics, robust and reliable gate drivers are critical for the efficient and safe switching of power semiconductors like IGBTs and MOSFETs. The Infineon ISO1I813T stands out as a high-performance, single-channel isolated gate driver designed to meet these demanding requirements. This article delves into its key specifications, a typical application circuit, and its defining characteristics.

Engineered for resilience, the ISO1I813T integrates a reinforced galvanic isolation barrier capable of withstanding high voltages. It offers a high isolation voltage (VISO) of 8 kVpeak (UL 1577 certified) and a working isolation voltage (VIOWM) of 1.7 kVpeak, making it exceptionally suited for industrial motor drives, renewable energy systems, and traction applications where high noise immunity and safety are paramount.

The device excels in driving high-current power modules. It delivers strong peak output currents of up to ±8 A, enabling very fast switching transitions that minimize switching losses in the power device. This is complemented by short and matched propagation delays, ensuring precise control and helping to prevent shoot-through in bridge configurations. The wide supply voltage range on both the input and output sides provides significant design flexibility.

A typical application circuit for the ISO1I813T involves a few key external components. The primary side is connected to the controller's PWM output, often with a small series resistor to limit current. On the secondary (output) side, the driver powers the gate of an IGBT or MOSFET. Critical external components include:

A decoupling capacitor placed very close to the driver's VCC and VEE pins to provide the high peak currents required during switching.

A gate resistor (RGATE) to control the slew rate of the switch, balancing between switching loss and electromagnetic interference (EMI).

Optional pull-down resistors and capacitors can be added for more complex functions like Miller clamping, though the IC itself incorporates robust undervoltage lockout (UVLO) protection on both the primary and secondary sides to prevent malfunction under insufficient supply voltages.

Key features that define the ISO1I813T include:

High Noise Immunity: Featuring Common-Mode Transient Immunity (CMTI) of >150 kV/µs, it remains stable in the presence of severe switching noise.

Integrated Functions: It includes UVLO protection for both the input and output supplies, safeguarding the power switch.

Wide Temperature Range: Operates reliably from -40 °C to +125 °C, catering to harsh industrial environments.

AEC-Q100 Qualified: This makes it a viable option for automotive applications, expanding its use case beyond industrial domains.

ICGOODFIND: The Infineon ISO1I813T is a robust and versatile isolated gate driver that combines high noise immunity, strong driving capability, and reinforced isolation. Its integration of critical protection features and suitability for automotive-grade applications make it an excellent choice for designers building next-generation high-power, high-reliability systems in industrial, automotive, and renewable energy sectors.

Keywords: Isolated Gate Driver, Reinforced Isolation, High CMTI, ±8A Peak Output, AEC-Q100 Qualified.